Method and apparatus for inline deposition of materials on a non-planar surface

ABSTRACT

In manufacturing a semiconductor device, a first chamber is provided. An opening couples the first chamber to a first environment through which at least one substrate can pass. A first seal environmentally isolates the first chamber from the first environment. A process chamber is coupled to the first chamber. Another seal environmental isolates the first and the process chambers. The substrate is placed within the first chamber, and the first chamber and the outside environment are isolated. The second opening is opened, and the substrate moves into the semiconductor process chamber. The first chamber is again environmentally isolated from the second volume. A semiconductor processing step is performed on the substrate within the processing chamber. While the substrate is processed, the substrate is rotated and translated through the processing chamber.

This Patent application is a continuation of co-pending of U.S. patentapplication Ser. No. 11/801,723 filed May 9, 2007 and entitled “METHODAND APPARATUS FOR DEPOSITION OF MATERIALS ON A NON-PLANAR SURFACE.”

FIELD

The present disclosure is related to semiconductor processing apparatusand techniques. Specifically, the present invention is directed tocommercial semiconductor processing on non-planar surfaces using bothtranslational and rotational movements.

BACKGROUND

In many conventional semiconductor processing technologies, the endproduct is a semiconductor device. This device is conventionallycharacterized as an essentially flat wafer in its width and lengthdimensions and having layered properties in the height dimension.Accordingly the specific processing steps used to make these planardevices are typically performed using planar or linear motions. In thismanner, most conventional semiconductor processing machinery employssolely planar motion (movement in the width and length) to make theseintegrated circuits (ICs).

In building the material up on a substrate in a conventional planar IC,such planar motions are employed to translate the substrate through aninline process. Further, great care is taken to ensure that materialdeposition only occurs in one height direction and on one surface of theIC.

In this manner, semiconductor processing steps can be performed on anassembly line basis with the various devices and/or substrates beingtranslated through the various pieces of semiconductor machinery. Asdescribed herein, such semiconductor processing steps can includedeposition steps such as physical deposition, chemical deposition,reactive sputtering deposition, or molecular beam epitaxy deposition.All variants of the preceding deposition families should be consideredas such semiconductor processing steps.

It should be understood that these semiconductor techniques describedare all well known and performed on a common basis with regards tosemiconductor devices having planar features. Accordingly, the variouslayers that are created on the planar substrate and/or IC can be createdeasily, cheaply, and in a timely manner, but only if the correspondingsemiconductor device is planar in nature.

Conversely, in current conventional practice, semiconductormanufacturing techniques and/or processing steps, such as deposition,evaporation, and scribing, although well known, are typically limited tooperating on these substantially planar substrates. Further,conventional practice is typically limited to processing machinery thatoperates in such a linear or planar fashion.

For example, FIG. 1A shows an exemplary conventional sputter depositionchamber 10. Sputter deposition is a method of depositing thin films ontoa substrate 11 by sputtering a block of source material 12 onto thesubstrate 11. Sputter deposition typically takes place in a vacuum.Sputtered atoms ejected into the gas phase are not in theirthermodynamic equilibrium state, and tend to deposit on all surfaces inthe vacuum chamber. A substrate (such as a wafer) placed in the chamberwill be coated with a thin film of the source material 12. Sputteringtypically takes place with argon plasma, or another inert gas in aplasma state, as well as the target material (i.e. a semiconductivematerial, a metallic material, or a buffer material.)

Another common method of deposition is evaporation deposition, asdescribed with respect to FIG. 1B. The source material 12 is exposed toa high temperature such that the material is evaporated. This can takeplace in a vacuum, which more easily allows vapor particles to traveldirectly to the target substrate, where they condense back to a solidstate.

The construction of a non-planar shaped device would be problematicusing planar- or linear-based manufacturing devices. For example, if onewished to create a light-emitting diode on a tube (ostensibly to make alight source), such planar- or linear-oriented manufacturing deviceswould make its manufacture problematic (at the least). One solution tothis problem of manufacturing semiconductors on non-planar substratescan be found in U.S. patent application Ser. No. 60/922,290 entitled“Method Of Depositing Materials On A Non-Planar Surface”, filed on Apr.5, 2007.

Further, producing non-planar ICs in commercial quantities would bedifficult, and not just due the problems inherent in these alternativemanufacturing geometries. One would also have to scale to produce thealternative geometries in numbers in an efficient manner.

In the use of some conventional manufacturing technologies, thesubstrates are typically inserted into the semiconductor manufacturingsystem to be processed. However, when the semiconductor manufacturingsystem is opened, the external environment floods into the processingarea or the processing chamber. After the manufacturing system isopened, the substrates are loaded into the semiconductor manufacturingsystem, and the environment within the processing volume of thesemiconductor manufacturing system can be altered to to match the neededprocessing environment. At the end of all these steps, the processing ofthe substrates is started. However, the replacement of the environmentwith the processing environment in such alternative geometry processingsystems could take a significant amount of time, thus decreasing theoverall effectiveness and efficiency of the semiconductor manufacturingsystem.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The accompanying drawings, which are incorporated into and constitute apart of this specification, illustrate one or more embodiments of thepresent invention and, together with the detailed description, serve toexplain the principles and implementations of the invention.

FIG. 1A shows a conventional sputter chamber for deposition of materialson a substantially planar semiconductor substrate.

FIG. 1B shows a conventional evaporation deposition chamber.

FIG. 2A is a side functional diagram of a semiconductor processingapparatus associated with a load chamber and an optional exit chamber.

FIG. 2B is a side functional diagram of a semiconductor processingapparatus associated with a load chamber, an intermediate chamber, andan optional exit chamber.

FIG. 3 shows an example of non-planar substrates per the instantdisclosure along with an exemplary tray used in the processing.

FIG. 4 shows an example of non-planar substrates being loaded into aprocessing chamber per the instant disclosure.

FIGS. 5 and 6 show exemplary means for rotation per the instantdisclosure.

FIG. 7 shows an exemplary cross section of a processing chamber with thenon-planar substrates rotating while concurrently being moved down atranslational path.

FIG. 8A shows an exemplary combination of rotation and translation ofthe non-planar substrates.

FIG. 8B shows an exemplary combination of rotation and translation ofthe non-planar substrates.

FIGS. 9, 10, and 11 are block diagrams of exemplary methods of operatingan inline system for depositing material on a non-planar substrate.

DETAILED DESCRIPTION

Methods and apparatuses directed to inline deposition of semiconductormaterials and other materials in the manufacture of semiconductordevices on non-planar surfaces are described herein. In thisspecification and claims, the term “substrate” can refer to an actualbase upon which materials common to semiconductor manufacturing aredeposited, or a partially built-up device already having one or morematerials already deposited. In this specification and claims, the term“non-planar” can refer to any substrate that is not substantially planarin construction (i.e. one that does not lie essentially in a twodimensional, substantially relatively flat surface).

Examples of non-planar surfaces include surfaces having an arcuatefeature, a curved feature, or surfaces having more than one planarsurface conjoined in differing two-dimensional planes. Such non-planarsurfaces can include “open surfaces” (i.e. “sheets”), or “closedsurfaces” (i.e. rods, tubes, among others.) Such closed surfaces besolid in nature (i.e. rods), hollow (i.e. tubes), and can include thosesurfaces having indentations (i.e. cylinders.) The closed surfaces canbe of any cross-sectional geometry, and such cross-section can includecurved features, arcuate features, linear features, or any combinationthereof. The cross-sectional geometry can include curved or arcuategeometries (i.e. circles and ovals), or any linear geometry (squares,rectangles, quadritalaterals, triangles, or any n-faced geometry,regular and irregular.) The previous examples of non-planar geometriesare exemplary in nature, and the reader will note that many differingnon-planar geometries are possible and should be considered as part ofthis specification. The shapes are able to be circular, ovoid, or anyshape characterized by one or more smooth curved surfaces, or any spliceof smooth curved surfaces. The shapes are also able to be linear innature, including triangular, rectangular, pentangular, hexagonal, orhaving any number of linear segmented surfaces. Or, the cross-section isable to be bounded by any combination of linear surfaces, arcuatesurfaces, or curved surfaces.

The present disclosure will be described relative to semiconductordeposition on tubular substrates. However, it will be apparent to one ofordinary skill in the art that teachings of this disclosure are able tobe directly applied to the deposition of other types of useful materialson a wide variety of non-planar surfaces. Moreover, while the teachingsherein are directed towards semiconductor deposition, it will beapparent to one of ordinary skill in the art that teachings of thisinvention are able to be directly applied to technologies requiringdeposition of materials on a variety of non-planar surfaces including,but not limited to, manufacture of non-planar photovoltaic cells,non-planar LEDs, and the like. The following detailed description of thepresent invention is illustrative only and is not intended to be in anyway limiting. Other embodiments of the present invention will readilysuggest themselves to such skilled persons having the benefit of thisdisclosure.

Reference will now be made in detail to implementations of the presentinvention as illustrated in the accompanying drawings. The drawings maynot be to scale. The same reference indicators will be used throughoutthe drawings and the following detailed description to refer toidentical or like elements. In the interest of clarity, not all of theroutine features of the implementations described herein are shown anddescribed. It will, of course, be appreciated that in the development ofany such actual implementation, numerous implementation-specificdecisions must be made in order to achieve the developer's specificgoals, such as compliance with application, safety regulations andbusiness related constraints, and that these specific goals will varyfrom one implementation to another and from one developer to another.Moreover, it will be appreciated that such a development effort will bea routine undertaking of engineering for those of ordinary skill in theart having the benefit of this disclosure.

FIGS. 2 a and 2 b are exemplary embodiments of a semiconductordeposition system that is suited for inline and continuous production ofsemiconductors having non-planar geometries. In a semiconductorprocessing system 14 a, a load chamber 16 is provided that hasenvironmental seals to the external environment and to a processingchamber 18. The load chamber 16 is environmentally sealed from theprocessing chamber 18, and then opened to the external environment. Thesubstrates are initially loaded into the load chamber 16, and the loadchamber 16 with the substrates is then sealed from the externalenvironment. The environment of the load chamber 16 is can be matched tothe environment of the processing chamber 18. The environmental sealbetween the load chamber 16 and the processing chamber 18 is opened.

The substrates then transition to the processing chamber 18, and theload chamber 16 can be environmentally sealed from the processingchamber 18. Within the processing chamber 18, a semiconductor processingstep is performed on the substrates. An optional exit chamber 20 isshown, where the exit chamber 20 has an environmental seal opening tothe processing chamber 18 and an environmental seal opening to anoutside environment. When the processing is finished on the substrates,the environmental seal between the exit chamber 20 and the processingchamber 18 is opened and the substrates can then transition into theexit chamber 20. When the substrates are in the exit chamber 20, theenvironmental seal between the processing chamber 18 and the exitchamber 20 is closed, thus isolating the environment within theprocessing chamber 18. At this point, the outer seal on the exit chamber20 is opened, and the substrates can transition out of the exit chamber20.

It should be noted that the load chamber 16 can be concurrently reloadedwith another load of substrates when the first set of substratestransitions into the processing chamber 18. In this manner a continualcycle of processing can be performed on substrates with the processingsystem 18.

FIG. 2 b details another exemplar processing system. In this system, theprocessing is expanded to a plurality of processing chambers 18 a-b. Anintermediate lock chamber 22 acts as an environmental buffer between theprocessing chamber 18 a and the processing chamber 18 b in much the samemanner as the load chamber 16 acts as an environmental buffer between anexternal environment and the environment within the processing chamber18 in FIG. 2 a.

It should be noted that the volumes of the load chamber 16, the lockchamber 22, and/or the exit chamber 20 can be substantially less thanthe volumes of the processing chambers. In this manner, the need toevacuate the processing chamber prior to processing and thenre-establishing an appropriate environment in the particular processingchamber is eliminated.

The exemplary processing chamber in this example can be a sputterdeposition system, a reactive sputter deposition system, an evaporationdeposition system or any combination thereof, where the system has atleast one chamber where material is deposited on a substrate and atleast one target deposition material. Alternatively, the exemplaryprocessing chamber can be any chamber useful for depositing or growingthin films on a substrate. The atmosphere within the processing chambercan be of any sort that enables the semiconductor process, including awide range of temperatures, wide ranges of pressures, and wide ranges ofchemistries (including a lack of atmosphere as might be common in a truevacuum chamber.)

FIG. 3 is a perspective view of a load tray that could be employed withthe present disclosure. The elongated substrates in this embodiment areloaded into a tray such that longitudinal axes of the elongatedsubstrates are perpendicular to the inline motion of the tray. This traycould be placed into the load chamber, and the load chamber need only beslightly larger than the tray itself. Given that an inline processingarea could be many multiples of the length of the tray, many multiplesthe height of the tray, and at least the width of the tray (if notmore), the volume associated with the load chamber need only be a smallfraction of the volume of the inline processing chamber.

The blowup in FIG. 3 details a tray with a set of rollers associatedwith the frame. The rollers can be coupled to members that are in turncoupled to the elongated substrates. In one instance, the rollers cancontact a surface of the processing chamber. When this occurs, thecontact between the rollers and the surface, along with thetranslational force provided by the tray, causes the rollers to turn.Thus, when the tray is transported via a translational motion, therollers will rotate, and thus rotate the elongated substrates.

FIG. 4 is a perspective diagram of a substrate tray being loaded into aload chamber. In this diagram the non-planar substrates 26 are shownloaded onto a tray 28 for processing. The tray and associated substratesare to be loaded into an exemplary load chamber 30, which is associatedwith a chambered processing system. In some embodiments, the non-planarsubstrates 26 are fixed with the tray 28 such that a surface of thenon-planar substrates are elevated from the top surface of the tray 28.Of course, the top surfaces of the substrates need not be elevated abovethe top surface of the tray. The top surface of the tray may be abovethe top surface of any substrate, below the top surface of anysubstrate, or coincide with the top surface of any substrate. Of course,the substrates could also have any number of any orientations withrespect to the top level of the tray in combination with any number withanother orientation with the top level of the tray.

In some embodiments, the chambered processing system and/or load chamberhas ingress and an egress, where the path between the ingress and egressdetermines a translational path down which the non-planar substrates 26travel. In some embodiments, as the tray 28 enters and translatesthrough the deposition chamber, the non-planar substrates 26 are rotatedalong their longitudinal axes. In this manner, the outside surfaces ofthe substrates 26 are exposed to the particular semiconductor process.

It should be noted that the intermediate lock chamber and the exitchamber have similar functionality. Accordingly the descriptionscontained within this document that refer to a load chamber may beapplied with equal clarity to the intermediate lock chamber and/or theexit chamber.

The translation motion through the load chamber and/or depositionchamber can be effectuated by, for example, a linear drive mechanism 32.However, any means may be used to effectuate translational motion of thesubstrate(s) through the processing system. The linear drive mechanismcould have matching teeth 34, that would help effectuate a rotation ofthe elongated substrates in one embodiment contemplated

In one embodiment, the trays are able to be magnetically coupled to thelinear drive mechanism. In this case they do not physically contact thedeposition chamber, which may result in enhanced uniform deposition.

FIG. 5 shows an example of a method and/or apparatus for depositingsemiconductor materials on non-planar substrates. A non-planar substrate26 is characterized by a cross-section bounded by any one of a number ofshapes. As described herein, for ease of discussion only, a circularcross-section is described in this description, but any non-planargeometry may be used. In this embodiment, the non-planar substrate 26 ishollow within its body, or has an indentation. Each non-planar substrate26 is fitted with at least one mandrel 36. The mandrels 36 are insertedinto the hollow portion or the indentation of the non-planar substrates26. In some embodiments, the mandrels 36 couple within the hollowportion of the non-planar substrates 26 such that contact loci 38between the mandrel 36 and the non-planar substrates 26 maintainsufficient contact and effectuate sufficient torque to allow for arotation of the non-planar substrates 26 along a longitudinal axiswithout unwanted slippage, which could causing undesired or unplannedrotation. As the mandrels rotate, the substrates 26 also rotate. Thecontacting surface of the mandrels may be smooth. In one case, thehollow or indented feature of the mandrels might have a patternassociated with it, and the mandrel might have a “locking” patternassociated with it. In this example, the substrate and the mandrel maybe “mated”. One example of a locking pattern would be an example of anynumber of “gear teeth” associated with a matched gear-tooth feature thatwould accomplish this locking. In another embodiment, the substratescould have a “cup” fitted over one or more ends. The cup is attached toa rotating member. When the rotating member rotates, the cup would applyrotational force to the outside of the substrate, in turn rotating thesubstrate.

FIG. 6 shows an exemplary embodiment of a rotation mechanism forrotating the non-planar substrates as they translate down or through thelock chamber and/or a processing chamber. In this exemplary embodiment,a gear and pulley system 40 is operatively coupled to the mandrel 36. Insome embodiments, the gear and pulley system comprises teeth 42. Aspreviously described, the linear drive mechanism has matching teeth. Insome embodiments, as the tray continues in the translational direction,the teeth 42 on the gear and pulley system 40 mesh with the matchingteeth in the linear drive mechanism, enabling the gear and pulley system40 to rotate the non-planar substrates when being translated through theprocessing chamber. Such rotation enables the processing step to beperformed over the surface areas of the non-planar substrates, up to andincluding the entirety of the surface area. Any predetermined portion ofthe surface area of the non-planar substrates is able to be exposed tothe processing step. In a further alternative embodiment, anypredetermined pattern is able to be deposited on the surface area.Further by way of example, in another embodiment, the teeth 42 are ableto be affixed to the mandrel 36.

In another embodiment, dual sets of gear pulley systems may be used.Such use need not be limited to driving not just a single mandrel, butnumerous mandrels at the same time. Or, a magnetic system can be used toaccomplish the rotation. In this embodiment, the force used to power therotation mechanism comes not from a physically linked source such as thegear pulley system described. The mandrels may be physically linked to amagnetic material. External magnets can be provided and rotated, thusimparting the rotation of the external magnets to the magnetic materialthrough an associated magnetic field, where the rotation is physicallyimparted to the mandrel and the substrates. Accordingly, it can beappreciated by those of ordinary skill in the art that other alternativemeans or methods of rotation are able to be incorporated herein toachieve the end result of rotating the non-planar substrates during thetranslational motion through the chamber. This disclosure should be readto include those types of mechanisms to impart such a rotation to thesubstrates.

FIG. 7 shows an exemplary cross section of a deposition chamber thatmight employ such lock systems and rotational systems. By way ofexample, a chamber 44 is the first chamber of a Copper Indium GalliumSelenide (CIGS) sputter system. An inert plasma gas such as argon 46 isfired into the chamber 44 via an intake 48. Upon entering the chamber,the plasma gas molecules 46 collide with one or more sputtering targets50-54. By way of example, the sputter targets 50, 52, and 54 areselenium, copper and gallium respectively. As the inert plasma gas 46bombards the targets 50, 52, and 54, molecules of the target materialsleave thermal equilibrium and begin coating all surfaces within thechamber 44. In some embodiments, the non-planar substrates 26 continuerotating about their longitudinal axes as they translate through thechamber 44, such that their outer surface areas will be coated by themolecules of the sputtering targets 50, 52, and 54. The rate of rotationthrough as well as the rate of translation within the chamber 44 areable to be predetermined as functions of the sputtering targetmaterials, the ambient temperature, the temperature and kinetic energyof the plasma gas 46, and the desired thickness of the coating uponnon-planar substrates, among other factors. It should be noted that thesource materials need not be isolated from one another, whatever thedeposition step variety, and that the sources may be combined.

Control and measurement systems can be used to manage and control therates of translation and rotation. The rates can be constant, ordynamic. The relationship between the rate of translation and a rate ofrotation can be fixed, such as depicted in the system employing thegear-pulley system. The relationship between the rate of translation androtation can be varied and/or controlled, such as varying the rate ofrotation in the magnetically coupled system. The rate of translation andthe rate of rotation can be coupled or can be independent. When eachsubstrate is individually rotated, the rates between differingsubstrates can be the same of different. The rotation can be analog innature, or can occur in discrete steps. The translation can be analog innature, or occur in discrete steps. Further, both the rotation and thetranslation can occur individually as analog, individually as discretesteps, or in varying combinations.

FIGS. 8A and 8B show exemplary rotation and translation combinations forthe non-planar substrates 26 as they enter and move through the chamber18. In some embodiments, the non-planar substrates 26 are rotating abouttheir longitudinal axes via mandrels 36 fixed to the tray 28. In FIG.8A, the non-planar substrates 26 translate through the chamber 18lengthwise as they rotate. In FIG. 8B, the non-planar substrates 26translate through the chamber 18 widthwise. In both exemplaryembodiments, the non-planar substrates 26 rotate concurrently and/orsimultaneously as they translate through the chamber 18.

FIG. 9 details an exemplary method to effectuate an inline deposition ofsemiconductor materials on elongated non-planar substrates. The processchamber is sealed from the load chamber in a step 100. The load chamberis opened to the external environment in a step 102, and the substratesare put into the load chamber in a step 104. The load chamber is sealedto the external environment in a step 106, and the environment withinthe load chamber can be changed in a step 108. In a step 110, theprocess chamber is unsealed from the load chamber and the substrates aremoved into the process chamber in a step 112.

In the step 108, preferably the environment is changed to match theprocess chamber environment as closely as possible. However, it shouldbe noted that in some cases, due to large differences in volumes, theenvironment within the load chamber need not necessarily be changed.This can happen when the addition of the environment of the load chambermay not have significant impact on the overall processing chamberenvironment. However, it should be noted that whether the environment ischanged or not, the process chamber is at all times sealed and isolatedfrom the external environment.

The load chamber is sealed from the process chamber in a step 114 andthe substrates are processed while being translated and rotated in astep 116. It should be noted that the steps 114 and 116 can be performedconcurrently. However, only after the process chamber is sealed from theload chamber in the step 114 should the load chamber be unsealed to theexternal environment in the step 102, albeit for another set ofsubstrates.

In a step 120 the substrates are removed. It should be noted that thesubstrates are preferably removed in the step 120 prior to the repeat ofplacing new substrates into the process chamber in the steps 110 and112. However, some inline systems may be able to concurrently supportolder substrates and have newer ones placed into it on a concurrentbasis.

FIG. 10 is a flow diagram detailing an exemplary use of an exit chamberin an inline rotational system.

FIG. 11 details an exemplary method to effectuate an inline depositionof semiconductor materials on elongated non-planar substrates using anintermediate lock mechanism. The next process chamber is sealed from thelock chamber in a step 134. The lock chamber is opened to the previousprocess chamber in a step 136, and the substrates are put into the lockchamber in a step 138. The lock chamber is sealed to the previousprocess chamber in a step 140, and the environment within the lockchamber can be changed in a step 142. In a step 144, the next processchamber is unsealed from the lock chamber and the substrates are movedinto the next process chamber in a step 146.

In the step 142, preferably the environment is changed to match the nextprocess chamber environment as closely as possible. However, it shouldbe noted that in some cases, due to large differences in volumes, theenvironment within the lock chamber need not necessarily be changed.

The lock chamber is sealed from the next process chamber in a step 148and the substrates are processed while being translated and rotated in astep 150. It should be noted that the steps 148 and 150 can be performedconcurrently. However, only after the process chamber is sealed from thelock chamber in the step 148 should the lock chamber be unsealed to theexternal environment in the step 136, albeit for another set ofsubstrates.

In a step 152 the substrates are removed from the next process chamber.It should be noted that the substrates are preferably removed in thestep 152 prior to the repeat of placing new substrates into the nextprocess chamber in the steps 144 and 146. However, some inline systemsmay be able to concurrently have older substrates being removed whilenewer ones are still being processed. Further some inline systems may beable to concurrently have newer substrates being placed into theprocessing chamber while older ones are still being processed.

In operation, the present invention is can manufacture non-planarsemiconductor devices by rotating non-planar substrates as they movedown a translational path of a processing chamber. Rotational andtranslational movement can be effectuated by any known or convenientmeans, including, but not limited to a linear drive mechanism and a gearand pulley mechanism. The combination of rotational and translationalmotion provides for deposition of materials on the outer surface of thenon-planar substrate during processing. Alternatively, such a rotationaland translational processing system is able to be applied topowdercoating, chrome plating, or other metal plating. Insemiconductor-related applications, a tubular substrate is able to beprocessed into a tubular, non-planar light emitting diode (LED). Furtherby way of example, a tubular substrate is able to be processed into anon-planar photovoltaic cell. Such a photovoltaic cell is able to have agreater surface area incidental to the sun's rays allowing for greatercurrent generation.

It should be noted that the current description uses a tray toeffectuate much of the transport functionality and substrate handling.While trays allow for ease of handling in industrial applications, thisdisclosure should not be construed as being limited to having trays. Thetranslational and rotational aspects of substrate handling can beeffectuated by mechanisms that are inherent to the processing machinery,and that are loaded singly with a substrate or in groups of multiplesubstrates. The load chamber, the lock chamber, and the exit chamber mayall be configured to use such machine-based rotational and translationalmovement without the use of support trays, and this should be consideredas being part of this disclosure.

A method and apparatus for manufacturing a semiconductor device on atleast one substrate is envisioned. A first chamber having a first volumeis provided. A first opening couples the first chamber to a firstenvironment, and the first opening allows passage of the at least onesubstrate. A first sealing member is provided to establish anenvironmental seal between the first chamber and the first environment.A semiconductor process chamber, having a second volume withsubstantially a processing environment, is coupled to the first chamberthrough a second opening. The second opening allows passage of the atleast one substrate is provided, and a second sealing member is providedto establish an environmental seal between the first chamber and thesemiconductor process chamber. The first volume and the second volumeare environmentally isolated from one another for a first time. The atleast one substrate is placed within first volume from the firstenvironment, and the first volume and the first environment areenvironmentally isolated. The second opening is opened, and the at leastone substrate is moved into the semiconductor process chamber. For asecond time, the first volume is environmentally isolated from thesecond volume. A semiconductor processing step is performed on the atleast one substrate within the semiconductor processing chamber. Whilethe semiconductor processing step is occurring, the at least onesubstrate is moved. The movement includes rotating the at least onesubstrate during the semiconductor step, and translating the at leastone substrate through the processing chamber.

In one instance the second volume is larger than the first volume. Thesecond volume can be greater than 1.5×, greater than 2×, greater than3×, greater than 5×, greater than 10×, greater than 25×, greater than50×, greater than 100×, greater than 250×, greater than 500×, greaterthan 1000×, or greater than 5000× the first volume. The semiconductorprocessing step can includes a deposition of a film of semiconductormaterial. The semiconductor processing step can be a physical vapordeposition, a chemical vapor deposition, a sputtering step, or a thermalevaporation step, among many other types of steps.

Concurrently with the performing the semiconductor processing step onthe at least one substrate, at least one other substrate can be placedinto the first chamber. After environmentally isolating the first volumefrom the second volume for the second time, the at least one othersubstrate can be placed into the first chamber.

In one instance, at least partially between the steps of environmentallyisolating the first volume from the second volume the first and secondtimes, the environment in the first volume can be altered to moreclosely match the processing environment. An environmental factor in thefirst volume may be altered, such as changing the pressure or adding achemistry. Material can be removed material from the first volume.Material can be also be added material to the first volume, where thematerial is also found in the processing environment.

The processing chamber is can be a processing chamber in a series ofcoupled processing chambers. The processing chamber can be the firstchamber in a series of coupled processing chambers. The first chambercan couple two processing chambers. The first chamber can couple aprocessing chamber and a lock chamber. The first chamber can be coupledbetween a processing chamber and a load chamber.

The substrate can be an elongated substrate. The substrate can be atubular substrate. The one substrate can have at least one non-linearsurface. The substrate can have at least one linear surface. Thesubstrate can be a plurality of substrates attached to a load tray.

A method and apparatus for manufacturing a semiconductor device on asubstrate can have a first chamber that defines a first volume. Thefirst chamber has a first opening to a first environment that allowspassage of at least a first substrate. A first sealing member may beutilized to establish an environmental seal on the first opening betweenthe first chamber and the first environment.

A semiconductor processing step is performed on at least the firstsubstrate within the semiconductor processing chamber. At a first time,the first volume environmentally isolated from the first environment. Ata second time, the first volume is opened to the second volume. The atleast first substrate can be moved from the second volume to the firstvolume. The first volume is then environmentally isolated from thesecond volume.

The first volume can then be opened to the first environment.

Concurrently with the step of performing the semiconductor processingstep on the first substrate, the first substrate is moved. This can beaccomplished by rotating the first substrate such that more than half ofthe total surface area of the first substrate is exposed to thesemiconductor process. Further, the first substrate is translatedthrough the processing chamber.

The second volume can be larger than the first volume. The ratios notedabove can also apply to this, as can any number. In case the secondvolume is at least twice as large than the first volume.

In one instance, after opening the first volume to the firstenvironment, the first volume can be isolated from the firstenvironment. Subsequent to isolating the first volume from the firstenvironment, the first volume environment can be altered to more closelymatch the environment within the second volume.

At a point, the first substrate can be removed from the first volume.

In one instance, between the second time and the fourth time, asemiconductor processing step can be performed on a second substratethat would already have been previously loaded. Concurrently withperforming the semiconductor processing step on the second substrate,the second substrate can be moved. Such movement can include rotatingthe second substrate such that more than half of the total surface areaof the second substrate is exposed to the semiconductor process, andconcurrently with such rotation, translating at least the secondsubstrate through the processing chamber.

An apparatus for manufacturing semiconductor devices can have a firstchamber operable to accept a first substrate from among at least onesubstrate. A first aperture, associated with the first chamber,environmentally couples the first chamber to a first environment outsidethe first chamber. A first sealing member is provided that can reside inat least an open position and a closed position. The first sealingmember closes the first aperture and isolates the first chamberenvironment from the first environment when in the closed position, andallows the first environment into the first chamber when in the openposition. A processing chamber is provided to perform a semiconductorprocessing step on at least one substrate under a processingenvironment. The processing chamber has a first motion mechanismoperable to move the substrate in a translational manner through theprocessing chamber. A second motion mechanism provides a rotation to theat least one substrate, and the first motion mechanism can operateconcurrently with second motion mechanism.

A second aperture couples the first chamber and the processing chamber.A second sealing member is provided that resides in at least an openposition and a closed position. The second sealing member shuts thesecond aperture and isolates the first chamber environment from theprocessing environment when in the closed position, and opens the secondaperture and allows the first chamber environment into the processingchamber when in the open position.

In one instance, the first chamber has a substantially smaller volumethan the processing chamber. The processing chamber can deposit of afilm of semiconductor material on the at least one substrate. Theprocessing chamber can perform a physical vapor deposition, a chemicalvapor deposition, a sputtering process, or any other deposition-typeoperation on the substrate.

The first chamber can be coupled between the processing chamber and asecond processing chamber. The first chamber can connects the processingchamber the second processing chamber. The first chamber can connect theprocessing chamber and a lock chamber. The first chamber can connect theprocessing chamber and an exit chamber. The first chamber can connectthe processing chamber and a load chamber.

The first chamber can receive the at least one substrate when thesemiconductor processing step is finished on the at least one substrate.The first chamber can receive the at least one substrate prior to thesemiconductor processing step being performed on the at least onesubstrate.

The apparatus can concurrently: i) perform the semiconductor processingstep on the at least one substrate; ii) have another substrate placedinto the first chamber. The apparatus can concurrently perform asemiconductor processing step on the at least one substrate, whileplacing another substrate into the processing chamber.

The apparatus can have a mechanism for changing an environmental factorwithin the first chamber. The environmental factor can be pressure,temperature, or a chemistry.

The processing chamber can be a series of coupled processing chambers.

The substrate can be an elongated substrate. The substrate can be atubular substrate. The substrate can include one non-linear surface. Thesubstrate can includes at least one linear surface.

A method of semiconductor processing onto at least one substrate isenvisioned. A semiconductor substrate is provided. The substrate has atotal surface area comprising either: a) a plurality of interlinkedsurface characteristics; or b) an omnifacial surface characteristic.

A semiconductor process chamber defining a first volume is provided. Apreliminary chamber, having a first opening to an external environmentand a second opening to the semiconductor process chamber is alsoprovided. The first opening and the second opening each provide anenvironmental seal, and are operable to allow passage of the least onesubstrate. The preliminary chamber defines a second volume, where thesecond volume is no more than 25% of the first volume. The first volumeis environmentally isolated from the second volume, and the substrate isplaced the within second volume from the external environment. Thesecond volume is environmentally isolated from the external environment.The environment in the second volume is changed to substantially matchthe environment within the first volume. The at least one substrate ismoved into the semiconductor process chamber, and the first volume isenvironmentally isolated from the second volume.

A semiconductor processing step is performed on the substrate within thesemiconductor processing chamber. Semiconductor source material isprovided, where the semiconductor source material is introduced into thesemiconductor processing chamber and at least in part concurrentlyremoved from the semiconductor processing chamber.

The at least one substrate is also moved in the semiconductor processchamber. The step of moving includes rotating the at least one substratesuch that more than half of the total surface area of the at least onesubstrate is exposed to the semiconductor process. The steps of movingand providing the semiconductor source material occur at least in partconcurrently with one another.

The present application has been described in terms of specificembodiments incorporating details to facilitate the understanding of theprinciples deposition of materials on a non-planar surface. Many of thecomponents shown and described in the various figures are able to beinterchanged to achieve the results necessary, and this descriptionshould be read to encompass such interchange as well. As such,references herein to specific embodiments and details thereof are notintended to limit the scope of the claims appended hereto.

I claim:
 1. A method of manufacturing a semiconductor device on at leastone substrate comprising, the method comprising: providing a firstchamber, the first chamber defining a first volume, the first chamberhaving a first opening to a first environment, the first openingoperable to allow passage of the at least one substrate; providing afirst sealing member operable to establish an environmental seal on thefirst opening between the first chamber and the first environment;providing a semiconductor process chamber, the semiconductor processchamber defining a second volume having substantially a processingenvironment, the semiconductor process chamber coupled to the firstchamber through a second opening, the second opening operable to allowpassage of the at least one substrate; providing a second sealing memberoperable to establish an environmental seal on the second openingbetween the first chamber and the semiconductor process chamber; for afirst time, environmentally isolating the first volume from the secondvolume; placing the at least one substrate within first volume from thefirst environment; environmentally isolating the first volume from thefirst environment; opening the second opening; moving the at least onesubstrate into the semiconductor process chamber; for a second time,environmentally isolating the first volume from the second volume;performing a semiconductor processing step on the at least one substratewithin the semiconductor processing chamber; concurrently with the stepof performing the semiconductor processing step: rotating the at leastone substrate along a longitudinal axis during the semiconductor step;translating the at least one substrate through the processing chamber.2. The method of claim 1 wherein the second volume is at least 1.5 timesthe first volume.
 3. The method of claim 1 wherein the semiconductorprocessing step includes a deposition of a film of semiconductormaterial.
 4. The method of claim 1 wherein the semiconductor processingstep comprises a physical vapor deposition.
 5. The method of claim 1wherein the semiconductor processing step comprises a chemical vapordeposition.
 6. The method of claim 1 wherein the semiconductorprocessing step comprises a sputtering step.
 7. The method of claim 1wherein the semiconductor processing step comprises a thermalevaporation step.
 8. The method of claim 1 further comprising the stepof: concurrently with the step of performing a semiconductor processingstep on the at least one substrate, placing at least one other substrateinto the first chamber.
 9. The method of claim 1 further comprising thestep of: after the step of for a second time environmentally isolatingthe first volume from the second volume, placing at least one othersubstrate into the first chamber.
 10. The method of claim 1 furthercomprising, at least partially between the step of a) for a first timeenvironmentally isolating the first volume from the second volume; andb) for a second time, environmentally isolating the first volume fromthe second volume, changing the environment in the first volume to moreclosely match the processing environment.
 11. The method of claim 1further comprising the step of: at least partially between the steps of:a) for the first time environmentally isolating the first volume fromthe second volume; and b) for the second time environmentally isolatingthe first volume from the second volume, changing an environmentalfactor in the first volume.
 12. The method of claim 11 wherein the stepof changing an environmental factor in the first volume compriseschanging the pressure.
 13. The method of claim 11 wherein the step ofchanging an environmental factor in the first volume comprises changingthe temperature.
 14. The method of claim 11 wherein the step of changingan environmental factor in the first volume comprises adding achemistry.
 15. The method of claim 11 wherein the step of changing anenvironmental factor in the first volume comprises removing materialfrom the first volume.
 16. The method of claim 11 wherein the step ofchanging an environmental factor in the first volume comprises addingmaterial to the first volume, the material comprising material existingwithin the processing environment.
 17. The method of claim 1 wherein theprocessing chamber is a processing chamber in a series of coupledprocessing chambers.
 18. The method of claim 17 wherein the processingchamber is the first chamber in a series of coupled processing chambers.19. The method of claim 1 wherein the first chamber couples twoprocessing chambers.
 20. The method of claim 1 wherein the first chamberis coupled between a processing chamber and a lock chamber.
 21. Themethod of claim 1 wherein the first chamber is coupled between aprocessing chamber and a load chamber.
 22. The method of claim 1 whereinthe at least one substrate includes at least one elongated substrate.23. The method of claim 1 wherein the at least one substrate includes atleast one tubular substrate.
 24. The method of claim 1 wherein the atleast one substrate includes at least one non-linear surface.
 25. Themethod of claim 1 wherein the at least one substrate includes at leastone linear surface.
 26. The method of claim 1 wherein the at least onesubstrate comprises a plurality of substrates attached to a load tray.27. A method of manufacturing a semiconductor device on a substratecomprising: providing a first chamber, the first chamber defining afirst volume, the first chamber having a first opening to a firstenvironment, the first opening operable to allow passage of at least afirst substrate; providing a first sealing member operable to establishan environmental seal on the first opening between the first chamber andthe first environment; providing a semiconductor process chamber, thesemiconductor process chamber defining a second volume havingsubstantially a processing environment, the semiconductor processchamber coupled to the first chamber through a second opening, thesecond opening operable to allow passage of at least the firstsubstrate; providing a second sealing member operable to establish anenvironmental seal on the second opening between the first chamber andthe semiconductor process chamber; performing a semiconductor processingstep on at least the first substrate within the semiconductor processingchamber; at a first time, environmentally isolating the first volumefrom the first environment; at a second time, opening the first volumeto the second volume; at a third time, moving at least the firstsubstrate from the second volume to the first volume; at a fourth time,environmentally isolating the first volume from the second volume; at afifth time, opening the first volume to the first environment;concurrently with the step of performing the semiconductor processingstep on at least the first substrate: rotating at least the firstsubstrate along a longitudinal axis such that more than half of thetotal surface area of the first substrate is exposed to thesemiconductor process; translating at least the first substrate throughthe processing chamber.
 28. The method of claim 27 wherein the secondvolume is larger than the first volume.
 29. The method of claim 28wherein the second volume is at least twice as large than the firstvolume.
 30. The method of claim 27 further comprising: at a sixth time,after the fifth time, environmentally isolating the first volume fromthe first environment; at a seventh time, after the sixth time, changingthe environment within the first volume to more closely match theenvironment within the second volume.
 31. The method of claim 27 furthercomprising: removing at least the first substrate from the first volume.32. The method of claim 27 further comprising: between the second timeand the fourth time, performing a semiconductor processing step on atleast a second substrate; concurrently with the step of performing thesemiconductor processing step on at least the second substrate: rotatingat least the second substrate such that more than half of the totalsurface area of the second substrate is exposed to the semiconductorprocess; translating at least the second substrate through theprocessing chamber.
 33. An apparatus for manufacturing semiconductordevices, the apparatus comprising: a first chamber operable to accept afirst substrate from among at least one substrate; a first aperture,associated with the first chamber, that environmentally couples thefirst chamber to a first environment outside the first chamber; a firstsealing member operable to reside in at least an open position and aclosed position, the first sealing member closing the first aperture andisolating the first chamber environment from the first environment whenin the closed position, the first sealing member allowing the firstenvironment into the first chamber when in the open position; aprocessing chamber, operable to perform a semiconductor processing stepon at least one substrate under a processing environment, the processingchamber comprising: a first motion mechanism operable to move the atleast one substrate in a translational manner through the processingchamber; a second motion mechanism operable to provide a rotation alonga longitudinal axis to the at least one substrate; the first motionmechanism operable to operate concurrently with second motion mechanism;a second aperture that couples the first chamber and the processingchamber; a second sealing member operable to reside in at least an openposition and a closed position, the second sealing member shutting thesecond aperture and isolating the first chamber environment from theprocessing environment when in the closed position, the second sealingmember allowing the first chamber environment into the processingchamber when in the open position.
 34. The apparatus of claim 33 whereinthe first chamber has a substantially smaller volume than the processingchamber.
 35. The apparatus of claim 33 wherein the processing chamber isoperable to deposit a film of semiconductor material on the at least onesubstrate.
 36. The apparatus of claim 33 wherein the processing chamberis operable to perform a physical vapor deposition.
 37. The apparatus ofclaim 33 wherein the processing chamber is operable to perform achemical vapor deposition.
 38. The apparatus of claim 33 wherein thefirst chamber is coupled between the processing chamber and a secondprocessing chamber.
 39. The apparatus of claim 38 wherein the firstchamber connects the processing chamber and the second processingchamber.
 40. The apparatus of claim 38 wherein the first chamberconnects the processing chamber and a lock chamber.
 41. The apparatus ofclaim 33 wherein the first chamber connects the processing chamber andan exit chamber.
 42. The apparatus of claim 33 wherein the first chamberconnects the processing chamber and a load chamber.
 43. The apparatus ofclaim 33 wherein the first chamber receives the at least one substratewhen the semiconductor processing step is finished on the at least onesubstrate.
 44. The apparatus of claim 33 wherein the first chamberreceives the at least one substrate prior to the semiconductorprocessing step being performed on the at least one substrate.
 45. Theapparatus of claim 33 wherein the processing chamber is operable toperform a sputtering process.
 46. The apparatus of claim 33, the whereinthe apparatus is operable to concurrently: i) perform the semiconductorprocessing step on the at least one substrate; ii) have placed into itanother at least one substrate.
 47. The apparatus of claim 33 whereinconcurrently with the semiconductor processing on the at least onesubstrate, another at least one substrate can be placed into theprocessing chamber.
 48. The apparatus of claim 33, further comprising amechanism for changing an environmental factor within the first chamber.49. The apparatus of claim 48 wherein the environmental factor ispressure.
 50. The apparatus of claim 48 wherein the environmental factoris temperature.
 51. The apparatus of claim 48 wherein the environmentalfactor is a chemistry.
 52. The apparatus of claim 33 wherein theprocessing chamber further comprises a series of coupled processingchambers.
 53. The apparatus of claim 33 wherein the at least onesubstrate includes at least one elongated substrate.
 54. The apparatusof claim 33 wherein the at least one substrate includes at least onetubular substrate.
 55. The apparatus of claim 33 wherein the at leastone substrate includes at least one non-linear surface.
 56. Theapparatus of claim 33 wherein the at least one substrate includes atleast one linear surface.
 57. An apparatus for manufacturingsemiconductor devices, the apparatus comprising: a first chamberoperable to accept at least a first substrate, the first substratehaving an upper surface portion that has an associated first normaldirection emanating out of the substrate and a lower surface portionhaving an associated second normal direction emanating out of thesubstrate, the first normal direction being anti-parallel to the secondnormal direction; a first aperture, associated with the first chamber,that environmentally couples the first chamber to a first environmentoutside the first chamber; a first sealing member operable to reside inat least an open position and a closed position, the first sealingmember closing the first aperture and isolating a first chamberenvironment from the first environment when in the closed position, thefirst sealing member allowing the first environment into the firstchamber when in the open position; a processing chamber, operable toperform a semiconductor processing step on the first substrate under aprocessing environment, the processing chamber comprising: asemiconductor material source, operable to dispense a first materialinto the processing environment; a first motion mechanism operable tomove the at least one substrate in a translational manner through theprocessing chamber; a second motion mechanism operable to provide arotation along a longitudinal axis to the first substrate, the rotationexposing both the upper surface and the lower surface of the substrateto the processing environment; a second aperture that couples the firstchamber and the processing chamber; a second sealing member operable toreside in at least an open position and a closed position, the secondsealing member shutting the second aperture and isolating the firstchamber environment from the processing environment when in the closedposition, the second sealing member allowing the first chamberenvironment into the processing chamber when in the open position. 58.The apparatus of claim 57 wherein the first chamber has a substantiallysmaller volume than the processing chamber.
 59. The apparatus of claim57 wherein the processing chamber is operable to deposit a film ofsemiconductor material on the first substrate.
 60. The apparatus ofclaim 57 wherein the processing chamber is operable to perform aphysical vapor deposition.
 61. The apparatus of claim 57 wherein theprocessing chamber is operable to perform a chemical vapor deposition.62. The apparatus of claim 57 wherein the first chamber is coupledbetween the processing chamber and a second processing chamber.
 63. Theapparatus of claim 62 wherein the first chamber connects the processingchamber and the second processing chamber.
 64. The apparatus of claim 62wherein the first chamber connects the processing chamber and a lockchamber.
 65. The apparatus of claim 57 wherein the first chamberconnects the processing chamber and an exit chamber.
 66. The apparatusof claim 57 wherein the first chamber connects the processing chamberand a load chamber.
 67. The apparatus of claim 57 wherein the firstchamber receives the at least one substrate when the semiconductorprocessing step is finished on the first substrate.
 68. The apparatus ofclaim 57 wherein the first chamber receives the at least one substrateprior to the semiconductor processing step being performed on the firstsubstrate.
 69. The apparatus of claim 57 wherein the processing chamberis operable to perform a sputtering process.
 70. The apparatus of claim57 wherein the apparatus is operable to concurrently: i) perform thesemiconductor processing step on the first substrate; ii) have placedinto it a second substrate.
 71. The apparatus of claim 57 whereinconcurrently with the semiconductor processing on the first substrate, asecond substrate can be placed into the processing chamber.
 72. Theapparatus of claim 57 further comprising a mechanism for changing anenvironmental factor within the first chamber.
 73. The apparatus ofclaim 72 wherein the environmental factor is pressure.
 74. The apparatusof claim 72 wherein the environmental factor is temperature.
 75. Theapparatus of claim 72 wherein the environmental factor is a chemistry.76. The apparatus of claim 57 wherein the processing chamber furthercomprises a series of coupled processing chambers.
 77. The apparatus ofclaim 57 wherein the first substrate includes at least one elongatedsubstrate.
 78. The apparatus of claim 57 wherein the first substrateincludes at least one tubular substrate.
 79. The apparatus of claim 57wherein the first substrate includes at least one non-linear surface.80. The apparatus of claim 57 wherein the first substrate includes atleast one linear surface.